Part number:
2SB1427W6
Manufacturer:
Pan Jit International
File Size:
209.26 KB
Description:
Pnp transistor.
* Silicon PNP epitaxial type
* Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA
* High collector current capability
* Excellent DC current gain characteristics
* Lead free in compliance with EU RoHS 2011/65/EU directive.
* Green molding compound as per IEC61249 Std. (Halogen Free)
2SB1427W6 Datasheet (209.26 KB)
2SB1427W6
Pan Jit International
209.26 KB
Pnp transistor.
📁 Related Datasheet
2SB1427 - Power transistor
(Rohm)
2SB1427
Middle Power Transistor (-20V, -2A)
Parameter
VCEO IC
Value
-20V -2A
lFeatures
1)Low saturation voltage, VCE(sat):Max.-500mV at IC/IB=-1/-.
2SB1427 - Power Transistor
(Kexin)
SMD Type
Power Transistor 2SB1427
Transistors
Features
Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current g.
2SB1420 - Silicon PNP Transistor
(Sanken electric)
(2 k Ω) (80 Ω) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1420 –120 –120 –6 –16(Pulse–26) –1 80(Tc=25°C) 150 –5.
2SB1420 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 20.
2SB1421 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Wide Area of Safe Operation ·Complement to.
2SB1424 - PNP Transistor
(Rohm)
Transistors
2SB1424 / 2SA1585S
Low VCE(sat) Transistor (−20V, −3A)
2SB1424 / 2SA1585S
zFeatures 1) Low VCE(sat).
VCE(sat) = −0.2V (Typ.) (IC/IB = .
2SB1424 - Transistor
(GME)
Production specification
Low VCE(sat) Transistor(-20V,-3A)
FEATURES
Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA).
Pb
Lead-free
Excellent DC cur.
2SB1424 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
• Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementar.