2SB1400 - Silicon PNP Epitaxial Transistor

Hitachi Semiconductor

Datasheet Details

Part number	2SB1400
Manufacturer	Hitachi Semiconductor
File Size	35.14 KB
Description	Silicon PNP Epitaxial Transistor
Datasheet	2SB1400 Datasheet
Additional preview pages of the 2SB1400 datasheet.

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Full PDF Text Transcription

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2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 1 kΩ (Typ) 400 Ω (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings –120 –120 –7 –6 –10 2 25 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 V V Unit V V V µA Test conditions I C = –0.

Published: Mar 22, 2005 |