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2SB1411 Datasheet - Toshiba Semiconductor

2SB1411 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm High DC current gain: hFE = 1500 (min) (VCE = 3 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Em.

2SB1411_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SB1411

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

142.39 KB

Description:

Silicon pnp transistor.

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2SB1411 2SB1411 Silicon PNP Transistor Toshiba Semiconductor

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