Click to expand full text
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1411
Switching Applications Hammer Drive, Pulse Motor Drive Applications
2SB1411
Unit: mm
• High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO
−100
V
Emitter-base voltage
VEBO −7 V
Collector current
DC Peak
IC
−2 A
ICP −3
Base current
IB −0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g.
2SB1411 Datasheet
