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2SB1457 Datasheet - Toshiba Semiconductor

2SB1457 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications 2SB1457 Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emit.

2SB1457 Datasheet (151.29 KB)

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Datasheet Details

Part number:

2SB1457

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

151.29 KB

Description:

Silicon pnp transistor.

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2SB1457 Silicon PNP Transistor Toshiba Semiconductor

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