2SB1453 Datasheet - NEC

2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

2SB1453 Features

* High DC current amplifier ratio hFE ≥ 100 (VCE =

* 5 V, IC =

* 0.5 A)

* Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base

2SB1453_NEC.pdf