* High DC current amplifier ratio hFE ≥ 100 (VCE =
* 5 V, IC =
* 0.5 A)
* Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base
2SB1453
NEC
130.31 KB
Pnp silicon epitaxial power transistor.
DATA SHEET
SILICON TRANSISTOR
2SB1453
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SB1453 is a power transistor that can di.
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