Datasheet4U Logo Datasheet4U.com

2SB1453 - PNP SILICON EPITAXIAL POWER TRANSISTOR

Datasheet Summary

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • High DC current amplifier ratio hFE ≥ 100 (VCE =.
  • 5 V, IC =.
  • 0.5 A).
  • Mold package that does not require an insulating board or insulation bushing.

📥 Download Datasheet

Datasheet preview – 2SB1453

Datasheet Details

Part number 2SB1453
Manufacturer NEC
File Size 130.31 KB
Description PNP SILICON EPITAXIAL POWER TRANSISTOR
Datasheet download datasheet 2SB1453 Datasheet
Additional preview pages of the 2SB1453 datasheet.

📁 Similar Datasheet

  • 2SB1450 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1451 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1452 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1454 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1454 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1454 - PNP Transistor (INCHANGE)
  • 2SB1455 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1455 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1455 - PNP Transistor (INCHANGE)
  • 2SB1457 - Silicon PNP Transistor (Toshiba Semiconductor)
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWING (UNIT: mm) FEATURES • High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.
Published: |