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2SB1431 - PNP Silicon Transistor

2SB1431 Description

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of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

2SB1431 Features

* High hFE due to Darlington connection: hFE ≥ 2,000 (VCE =
* 2 V, IC =
* 3 A)
* Mold package that does not require an insulating board or insulation bushing QUALITY GRADES
* Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C

2SB1431 Applications

* (OHFWURGH &RQQHFWLRQ  %DVH  &ROOHFWRU  (PLWWHU (48,9$/(17 &,5&8,7 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total po

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Datasheet Details

Part number
2SB1431
Manufacturer
NEC
File Size
129.02 KB
Datasheet
2SB1431-NEC.pdf
Description
PNP Silicon Transistor

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PNP Silicon Transistor NEC
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