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2SB1431 - PNP Silicon Transistor

Datasheet Summary

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • High hFE due to Darlington connection: hFE ≥ 2,000 (VCE =.
  • 2 V, IC =.
  • 3 A).
  • Mold package that does not require an insulating board or insulation bushing.

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Datasheet Details

Part number 2SB1431
Manufacturer NEC
File Size 129.02 KB
Description PNP Silicon Transistor
Datasheet download datasheet 2SB1431 Datasheet
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Full PDF Text Transcription

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'$7$ 6+((7 6,/,&21 32:(5 75$16,6725 6% 313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 )25 /2:)5(48(1&< 32:(5 $03/,),(56 $1' /2:63((' 6:,7&+,1* The 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWING (UNIT: mm) FEATURES • High hFE due to Darlington connection: hFE ≥ 2,000 (VCE = −2 V, IC = −3 A) • Mold package that does not require an insulating board or insulation bushing QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.
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