2SB1436
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2SB1430 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1430
DESCRIPTION ·With TO-220F package ·High DC .
2SB1430 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 200.
2SB1431 - PNP Silicon Transistor
(NEC)
'$7$ 6+((7
6,/,&21 32:(5 75$16,6725
6%
313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 )25 /2: )5(48(1&< 32:(5 $03/,),(56 $1' /2: 63(.
2SB1431 - PNP Transistor
(INCHANGE)
isc Silic\on PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 20.
2SB1432 - PNP SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
2SB1432
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED .
2SB1434 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistors
2SB1434
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to 2SD2177 I Features
• Low coll.
2SB1435 - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1435
Silicon PNP epitaxial planar type
For low-frequency output amplification
7.5±0.2 3.8±0.2
Unit: mm
4.5±0.2
■ Features
• Lo.
2SB1436 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1436
DESCRIPTION ·With TO-126 package ·Complemen.
2SB1436 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation-
: PC= 5W(Max)@TC=25℃ ·Complement to Type 2SD2.
2SB1438 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SB1438
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5.
