2SB1424 Datasheet - Rohm

Features

* 1) Low VCE(sat). VCE(sat) =

* 0.2V (Typ.) (IC/IB =

* 2A /

* 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. zStructure Epitaxial planar type PNP silicon transistor zExternal dimensions (Unit : mm) 2SB1424 4.5+

* 00..12 1.6±0.1