Datasheet4U Logo Datasheet4U.com

2SB1412 - Low Frequency Transistor

Datasheet Summary

Features

  • 1) Low VCE(sat). VCE(sat) =.
  • 0.35V (Typ. ) (IC/IB =.
  • 4A /.
  • 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO.
  • 30 Collector-emitter voltage VCEO.
  • 20 Emitter-base voltag.

📥 Download Datasheet

Datasheet preview – 2SB1412

Datasheet Details

Part number 2SB1412
Manufacturer ROHM
File Size 125.32 KB
Description Low Frequency Transistor
Datasheet download datasheet 2SB1412 Datasheet
Additional preview pages of the 2SB1412 datasheet.

📁 Similar Datasheet

  • 2SB1412 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SB1412 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SB1412 - PNP Transistor (Weitron Technology)
  • 2SB1412 - HIGH VOLTAGE SWITCHING TRANSISTOR (UTC)
  • 2SB1412 - Low Frequency Transistor (Kexin)
  • 2SB1412 - PNP Silicon Transistor (SeCoS)
  • 2SB1411 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SB1411 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1411 - PNP Transistor (INCHANGE)
  • 2SB1414 - Silicon PNP epitaxial planar type Transistor (Panasonic)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118.
Published: |