Part number:
2SB1412
Manufacturer:
File Size:
125.32 KB
Description:
Low frequency transistor.
* 1) Low VCE(sat). VCE(sat) =
* 0.35V (Typ.) (IC/IB =
* 4A /
* 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base
2SB1412
125.32 KB
Low frequency transistor.
📁 Related Datasheet
2SB1411 - Silicon PNP Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1411
Switching Applications Hammer Drive, Pulse Motor Drive Applications
2SB1411
Unit: mm
• H.
2SB1411 - SILICON POWER TRANSISTOR
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SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1411
DESCRIPTION ·With TO-220F package ·DARLINGT.
2SB1411 - PNP Transistor
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 150.
2SB1412 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Low collector-to-emitter saturation voltage
: VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% .
2SB1412 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SB1412
Rev.E May.-2016
DATA SHEET
/ Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.
/ Features
,， 2SD2118 。 Lo.
2SB1412 - PNP Transistor
(Weitron Technology)
2SB1412
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 2 3
Features:
* Excellent DC Current Gain Characteristics * Lo.
2SB1412 - HIGH VOLTAGE SWITCHING TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SB1412
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
DESCRIPTION
The UTC 2SB1412 is an epitaxial plan.
2SB1412 - Low Frequency Transistor
(Kexin)
SMD Type
Low Frequency Transistor 2SB1412
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low VCE(sat).
+0.2 9.7.
