* High hFE due to Darlington connection hFE ≥ 1,000 @VCE =
* 2.0 V, IC =
* 10 A)
* Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitte
2SB1432
NEC
103.38 KB
Pnp silicon epitaxial transistor.
DATA SHEET
SILICON POWER TRANSISTOR
2SB1432
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED .
📁 Related Datasheet
2SB1430 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1430
DESCRIPTION ·With TO-220F package ·High DC .
2SB1430 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 200.
2SB1431 - PNP Silicon Transistor
(NEC)
'$7$ 6+((7
6,/,&21 32:(5 75$16,6725
6%
313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 )25 /2: )5(48(1&< 32:(5 $03/,),(56 $1' /2: 63(.
2SB1431 - PNP Transistor
(INCHANGE)
isc Silic\on PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 20.
2SB1434 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistors
2SB1434
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to 2SD2177 I Features
• Low coll.
2SB1435 - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1435
Silicon PNP epitaxial planar type
For low-frequency output amplification
7.5±0.2 3.8±0.2
Unit: mm
4.5±0.2
■ Features
• Lo.
2SB1436 - Transistor
(Rohm)
Transistors
Low Frequency Transistor (*20V,*5A)
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = .
2SB1436 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1436
DESCRIPTION ·With TO-126 package ·Complemen.
