Datasheet Details
- Part number
- 2SB1432
- Manufacturer
- NEC
- File Size
- 103.38 KB
- Datasheet
- 2SB1432-NEC.pdf
- Description
- PNP SILICON EPITAXIAL TRANSISTOR
2SB1432 Description
DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
2SB1432 Features
* High hFE due to Darlington connection
hFE ≥ 1,000 @VCE =
* 2.0 V, IC =
* 10 A)
* Mold package that does not require an insulation board or insulation
bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitte
2SB1432 Applications
* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v
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