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2SB1481 TRANSISTOR

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Description

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm * High DC current gain: hFE = 2000 (min) (VCE .

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Applications

* 2SB1481 Unit: mm
* High DC current gain: hFE = 2000 (min) (VCE =
* 2 V, IC =
* 1.5 A)
* Low saturation voltage: VCE (sat) =
* 1.5 V (max) (IC =
* 3 A)
* Complementary to 2SD2241 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rati

2SB1481 Distributors

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