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2SB1481 Datasheet - Toshiba Semiconductor

2SB1481 TRANSISTOR

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SD2241 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base vol.

2SB1481 Datasheet (134.49 KB)

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Datasheet Details

Part number:

2SB1481

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

134.49 KB

Description:

Transistor.

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2SB1481 TRANSISTOR Toshiba Semiconductor

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