* q q q q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. (Ta=25˚C) Ratings
* 400
* 400
* 7
* 1
* 0.5 1 150
* 55 ~ +150 Unit V V V A A W ˚C ˚C 0.65 max. 1.0 1.0 0.2
2SB1488
Panasonic Semiconductor
41.29 KB
Silicon pnp triple diffusion planer type transistor.
Transistor
2SB1488
Silicon PNP triple diffusion planer type
Unit: mm
For power switching
0.15
6.9±0.1 0.7 4.0
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.
📁 Related Datasheet
2SB1481 - TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1481
Switching Applications
2SB1481
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, .
2SB1481 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 200.
2SB1481 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1481
DESCRIPTION ·With TO-220F package ·Compleme.
2SB1400 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SB1400
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
1 kΩ (Typ)
40.
2SB1400 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1400
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1400 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -120V(Min) ·High DC Current Gain-
: hFE= .
2SB1401 - Low frequency power amplifier
(Hitachi)
2SB1401
Silicon PNP Triple Diffused
ADE-208-875 (Z) 1st. Edition Sep. 2000 Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base .
2SB1402 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1402
DESCRIPTION ·With TO-220Fa package ·High DC.
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