Part number:
2SB1405
Manufacturer:
Sanyo Semicon Device
File Size:
69.44 KB
Description:
Pnp epitaxial silicon transistor.
.
2SB1405
Sanyo Semicon Device
69.44 KB
Pnp epitaxial silicon transistor.
.
📁 Related Datasheet
2SB1400 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SB1400
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
1 kΩ (Typ)
40.
2SB1400 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1400
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1400 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -120V(Min) ·High DC Current Gain-
: hFE= .
2SB1401 - Low frequency power amplifier
(Hitachi)
2SB1401
Silicon PNP Triple Diffused
ADE-208-875 (Z) 1st. Edition Sep. 2000 Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base .
2SB1402 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1402
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1402 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB1402
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
.
2SB1403 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1403
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1403 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -120V(Min) ·High DC Current Gain-
: hFE= .
