2SB1407 - Silicon PNP epitaxial planer type Transistor

Hitachi Semiconductor

Datasheet Details

Part number	2SB1407
Manufacturer	Hitachi Semiconductor
File Size	31.03 KB
Description	Silicon PNP epitaxial planer type Transistor
Datasheet	2SB1407 Datasheet
Additional preview pages of the 2SB1407 datasheet.

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Other Datasheets by Hitachi Semiconductor

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Full PDF Text Transcription

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2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings –35 –35 –5 –2.5 –3 18 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –35 –35 –5 — 1 Typ — — — — — — — — Max — — — –20 320 — –1.5 –1.

Published: Mar 22, 2005 |