PJP4N60 Datasheet, Mosfet, Pan Jit International

✔ PJP4N60 Features

4A , 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A
Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desige

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PJP4N60

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Pan Jit International

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📄 Datasheet

Description:

600v n-channel enhancement mode mosfet.

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PJP4N60 600V N-Channel Enhancement Mode MOSFET Pan Jit International