SIC04A065ND - SILICON CARBIDE SCHOTTKY DIODE
(Pan Jit International)
SiC04A065ND
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and .
SIC04A065T - SILICON CARBIDE SCHOTTKY DIODE
(Pan Jit International)
SiC04A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
4A
Features
Temperature Independent Switching Behavior Low Conduction and S.
SIC04C60 - 4A SiC Schottky Diode
(CITC)
SIC04C60
4A SiC Schottky Diode
■ Features
• Low Conduction and Switching Loss • Positive Temperature Coefficient on VF • Temperature Independent Swit.
SIC02A065NS - SILICON CARBIDE SCHOTTKY DIODE
(Pan Jit International)
SiC02A065NS
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and .
SIC02A065T - SILICON CARBIDE SCHOTTKY DIODE
(Pan Jit International)
SiC02A065T
SILICON CARBIDE SCHOTTKY DIODE
Voltage
650 V
Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and S.
SIC02A120S - SILICON CARBIDE SCHOTTKY DIODE
(Pan Jit International)
SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
Voltage 1200 V Current
2A
Features
Temperature Independent Switching Behavior Low Conduction and Sw.