CARBIDE Datasheet | Specifications & PDF Download

0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The

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E4M0025075J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 750V SiC MOSFET technology Tab

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CPW2-0600-S008B Silicon Carbide Schottky Diode Chip Z-Rec® Rectifier Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery • Zero Forward

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VDS 1200 V C2M0280120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 11 A 280 mΩ N-Channel Enhancement Mode F

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SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Datasheet Rev. 2.0, <2013-09-

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C3D08065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Rec

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C3D04060A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = 600 V IF (TC=135˚C) = 6 A Qc =   10 nC

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TO-220AC NXPSC04650 Silicon Carbide Diode 4 May 2015 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC

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TO-220AC NXPSC06650 Silicon Carbide Diode 4 May 2015 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC

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C3M0120090J VDS ID @ 25˚C 900 V 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode F

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Silicon Carbide Schottky Diode 650 V, 30 A FFSB3065B-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provi

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VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Channel Enhancement Mode Fea

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C3M0015065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blo

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VDS 1200 V C3M0040120K ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode

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C3M0160120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • 3rd generation Solicon Carbide (SiC

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N N-CHANNEL Enhancement Silicon Carbide MOSFET R MG065R060 MAIN CHARACTERISTICS Package ID VCE Rdson-typ （@Vgs=20V） Qg-typ 30A 650V 65MΩ 65nC

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G3R75MT12J 1200 V 75 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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G3R40MT12-CAL 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Softer RDS(ON) v

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C4D02120E 1200 V, 2 A Silicon Carbide Schottky Diode Features • 1.2 kV Schottky rectifier • Zero reverse recovery current • High-frequency operation

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