IJW120R100T1

Silicon Carbide-Junction Field Effect Transistor

Infineon

IJW120R100T1 Features

* Ultra fast switching

* Internal fast body diode

* Low intrinsic capacitance

* Low gate charge

* 175 °C maximum operating temperature Gate Drain Source Drain Pin 2 Gate Pin 1 Benefits

* Enabling higher system efficiency and/ or higher output power in same housing

IJW120R100T1 General Description

CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide. Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very high ruggedness. The extremely low switching and con.

IJW120R100T1 Datasheet (1.14 MB)

IJW120R100T1 Datasheet Preview — Preview of IJW120R100T1 PDF

Datasheet Details

Part number:

IJW120R100T1

Manufacturer:

Infineon ↗

File Size:

1.14 MB

Description:

Silicon carbide-junction field effect transistor.
SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Datasheet Rev. 2.0, <2013-09-.

📁 Related Datasheet

IJW120R070T1 - Silicon Carbide-Junction Field Effect Transistor (Infineon)
SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Datasheet Rev. 2.0, <2013-09-.

TAGS

IJW120R100T1 Silicon Carbide-Junction Field Effect Transistor Infineon

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IJW120R100T1 Features

IJW120R100T1 General Description

Datasheet Details

File Size:

Description:

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