Carbide-Junction Datasheet | Specifications & PDF Download

Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Ope

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Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Ope

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GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Swit

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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope

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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope

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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope

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GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features  250 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Except

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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope

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  Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperature independent switching perfo

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  Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperature independent switching perfo

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SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Datasheet Rev. 2.0, <2013-09-

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SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Datasheet Rev. 2.0, <2013-09-

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2N7639-GA Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Electrically Isolated Base Plate  Gate

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