.
Infineon
IJW120R100T1 - Silicon Carbide-Junction Field Effect Transistor
SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Datasheet Rev. 2.0, <2013-09-.
GeneSiC
GA05JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Ope.
GeneSiC
GA10JT12-CAL - Normally - OFF Silicon Carbide Junction Transistor
GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features 250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Except.
Infineon
IJW120R070T1 - Silicon Carbide-Junction Field Effect Transistor
SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Datasheet Rev. 2.0, <2013-09-.
GeneSiC
GA100SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack
GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Swit.
GeneSiC
2N7639-GA - OFF Silicon Carbide Junction Transistor
2N7639-GA Normally – OFF Silicon Carbide Junction Transistor Features 225°C maximum operating temperature Electrically Isolated Base Plate Gate.
GeneSiC
GA10JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Ope.
GeneSiC
GA20JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Ope.
GeneSiC
GA50JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Ope.
GeneSiC
GA10JT12-263 - Normally - OFF Silicon Carbide Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Ope.
GeneSiC
GA20SICP12-263 - Silicon Carbide Junction Transistor/Schottky Diode
Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features 175 °C maximum operating temperature Temperature independent switching perfo.
GeneSiC
GA50SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features 175 °C maximum operating temperature Temperature independent switching perfo.
GeneSiC
GR1500JT17-263 - Silicon Carbide Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Ope.
