GA10JT06-CAL
GeneSiC
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Off silicon carbide junction transistor.
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📁 Related Datasheet
GA10JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
(GeneSiC)
Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Ope.
GA10JT12-263 - Normally - OFF Silicon Carbide Junction Transistor
(GeneSiC)
Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Ope.
GA10JT12-CAL - Normally - OFF Silicon Carbide Junction Transistor
(GeneSiC)
GA10JT12-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Except.
GA100 - SCRs
(Microsemi)
.
GA100K6A1A - THERMISTORS
(TE)
SERIES I THERMISTORS
Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.
GA100K6A1B - THERMISTORS
(TE)
SERIES I THERMISTORS
Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.
GA100K6A1C - THERMISTORS
(TE)
SERIES I THERMISTORS
Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.
GA100K6A1D - THERMISTORS
(TE)
SERIES I THERMISTORS
Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.
GA100NA60U - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
.DataSheet.co.kr
PD - 94290
GA100NA60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFastTM: Optimized for minimum saturation voltage and ope.
GA100NA60UP - Insulated Gate Bipolar Transistor
(Vishay Siliconix)
.DataSheet.co.kr
GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
• Ultrafast: Optimized f.
