Datasheet4U.com - GA100NA60UP

GA100NA60UP Datasheet, transistor equivalent, Vishay Siliconix

Page 1 of GA100NA60UP Page 2 of GA100NA60UP Page 3 of GA100NA60UP
  • Preview is limited to a maximum of three pages.

PDF File Details

Part number: GA100NA60UP

Manufacturer: Vishay (https://www.vishay.com/) Siliconix

File Size: 317.22KB

Download: 📄 Datasheet

Description: Insulated Gate Bipolar Transistor

📥 Download PDF (317.22KB) Datasheet Preview: GA100NA60UP

PDF File Details

Part number: GA100NA60UP

Manufacturer: Vishay (https://www.vishay.com/) Siliconix

File Size: 317.22KB

Download: 📄 Datasheet

Description: Insulated Gate Bipolar Transistor

GA100NA60UP Features and benefits


* Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode
* Very low conduction and switching loss.

Image gallery

Page 1 of GA100NA60UP Page 2 of GA100NA60UP Page 3 of GA100NA60UP

TAGS

GA100NA60UP
Insulated
Gate
Bipolar
Transistor
Vishay Siliconix

📁 Related Datasheet

GA100NA60U - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
www.DataSheet.co.kr PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFastTM: Optimized for minimum saturation voltage and ope.

GA100 - SCRs (Microsemi)
.

GA100K6A1A - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1B - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1C - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1D - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack (GeneSiC)
GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Swit.

GA100TS120U - HALF-BRIDGE IGBT INT-A-PAK (International Rectifier)
PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-.

GA100TS120UPBF - IGBT (Vishay Siliconix)
www.DataSheet.co.kr GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A FEATURES • Generation 4 IGB.

GA100TS60SF - Standard Speed IGBT (International Rectifier)
www.DataSheet.co.kr Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • Standard Speed P.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts