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GA100SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack

GA100SICP12-227 Description

GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack .

GA100SICP12-227 Features

* 175 °C Maximum Operating Temperature
* Gate Oxide Free SiC Switch
* Optional Gate Return Pin
* Exceptional Safe Operating Area
* Integrated SiC Schottky Rectifier
* Excellent Gain Linearity
* Temperature Independent Switching Performance

GA100SICP12-227 Applications

* D G Pin D - Drain Pin S - Source GR Pin GR - Gate Retu

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Datasheet Details

Part number
GA100SICP12-227
Manufacturer
GeneSiC
File Size
1.25 MB
Datasheet
GA100SICP12-227-GeneSiC.pdf
Description
Silicon Carbide Junction Transistor/Schottky Diode Co-pack

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