GA100SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack
GA100SICP12-227 Features
* 175 °C Maximum Operating Temperature
* Gate Oxide Free SiC Switch
* Optional Gate Return Pin
* Exceptional Safe Operating Area
* Integrated SiC Schottky Rectifier
* Excellent Gain Linearity
* Temperature Independent Switching Performance
