GA100SICP12-227 Datasheet - GeneSiC

Silicon Carbide Junction Transistor/Schottky Diode Co-pack

* 175 °C Maximum Operating Temperature

* Gate Oxide Free SiC Switch

* Optional Gate Return Pin

* Exceptional Safe Operating Area

* Integrated SiC Schottky Rectifier

* Excellent Gain Linearity

* Temperature Independent Switching Performance

GA100SICP12-227

GeneSiC

1.25 MB

Silicon carbide junction transistor/schottky diode co-pack.

📁 Related Datasheet

GA100 SCRs (Microsemi)

GA100K6A1A THERMISTORS (TE)

GA100K6A1B THERMISTORS (TE)

GA100K6A1C THERMISTORS (TE)

GA100K6A1D THERMISTORS (TE)

GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

GA100NA60UP Insulated Gate Bipolar Transistor (Vishay Siliconix)

GA100TS120U HALF-BRIDGE IGBT INT-A-PAK (International Rectifier)

GA100TS120UPBF IGBT (Vishay Siliconix)

GA100TS60SF Standard Speed IGBT (International Rectifier)

TAGS

Image Gallery