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GA100SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack

Product Overview

GeneSiC

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GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack by GeneSiC - Datasheet Preview — Datasheet preview – GA100SICP12-227

Datasheet Details

Part number	GA100SICP12-227
Manufacturer	GeneSiC
File Size	1.25 MB
Description	Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Datasheet	GA100SICP12-227 Datasheet
Additional preview pages of the GA100SICP12-227 datasheet.

Product details

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Optional Gate Return Pin.
Exceptional Safe Operating Area.
Integrated SiC Schottky Rectifier.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Driv.

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Published: Dec 6, 2017 |