GA16JT17-247 Datasheet, Transistor, GeneSiC

GA16JT17-247 Features

• Transistor
• 175 °C Maximum Operating Temperature
• Gate Oxide Free SiC Switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature In

PDF File Details

Part number:

GA16JT17-247

Manufacturer:

GeneSiC

File Size:

1.97MB

Download:

📄 Datasheet

Description:

Junction transistor.

GA16JT17-247 Application

• Applications
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters

TAGS

GA16JT17-247

GeneSiC

📁 Related Datasheet

GA1621 - multi-function LCD driver (SilvanChip)
GA1621 GA1621General Description LCD The GA1621 is a 128 dots (32x4), memory mapping, and multi-function LCD driver. The S/W con-figuration feature.

GA100 - SCRs (Microsemi)
.

GA100K6A1A - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1B - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1C - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1D - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100NA60U - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.DataSheet.co.kr PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFastTM: Optimized for minimum saturation voltage and ope.

GA100NA60UP - Insulated Gate Bipolar Transistor (Vishay Siliconix)
.DataSheet.co.kr GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES • Ultrafast: Optimized f.

GA100SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack (GeneSiC)
GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Swit.

GA100TS120U - HALF-BRIDGE IGBT INT-A-PAK (International Rectifier)
PD - 50060B GA100TS120U HALF-BRIDGE IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-.