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GA10JT12-263 - Normally - OFF Silicon Carbide Junction Transistor

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GeneSiC

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GA10JT12-263 Normally - OFF Silicon Carbide Junction Transistor by GeneSiC - Datasheet Preview — Datasheet preview – GA10JT12-263

Datasheet Details

Part number	GA10JT12-263
Manufacturer	GeneSiC
File Size	903.84 KB
Description	Normally - OFF Silicon Carbide Junction Transistor
Datasheet	GA10JT12-263 Datasheet
Additional preview pages of the GA10JT12-263 datasheet.

Product details

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Short-Circuit Withstand Capability.
Lowest-in-class Conduction Losses.
High Circuit E.

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Published: Nov 9, 2015 |