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GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode

GA20SICP12-263 Description

  Silicon Carbide Junction Transistor/Schottky Diode Co-pack .

GA20SICP12-263 Features

* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Integrated SiC Schottky Rectifier
* Positive temperature coefficient for easy paralleling
* Low intrinsic device capacitance
* Low gate charge Advantages

GA20SICP12-263 Applications

* Down Hole Oil Drilling, Geothermal Instrumentation
* Hybrid Electric Vehicles (HEV)
* Solar Inverters
* Switched-Mode Power Supply (SMPS)
* Power Factor Correction (PFC)
* Induction Heating
* Uninterruptible Power Supply (UPS)
* Motor Drives Maximum Ratings at Tj =

📥 Download Datasheet

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Datasheet Details

Part number
GA20SICP12-263
Manufacturer
GeneSiC
File Size
291.63 KB
Datasheet
GA20SICP12-263-GeneSiC.pdf
Description
Silicon Carbide Junction Transistor/Schottky Diode

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Silicon Carbide Junction Transistor Schottky Diode GeneSiC
GeneSiC GA20SICP12-263-like datasheet