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GA20SICP12-263 - Silicon Carbide Junction Transistor/Schottky Diode

GeneSiC

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Datasheet Details

Part number	GA20SICP12-263
Manufacturer	GeneSiC
File Size	291.63 KB
Description	Silicon Carbide Junction Transistor/Schottky Diode
Datasheet	GA20SICP12-263-GeneSiC.pdf

GA20SICP12-263 Product details

Features

175 °C maximum operating temperature.
Temperature independent switching performance.
Gate oxide free SiC switch.
Integrated SiC Schottky Rectifier.
Positive temperature coefficient for easy paralleling.
Low intrinsic device capacitance.
Low gate charge Advantages.
Low switching losses.
High circuit efficiency.
High temperature operation.
High short circuit withstand capability.
Reduced cooling requirements.
Reduced system size Pa.

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Published: Jun 14, 2018 |