GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode

GeneSiC

Description

Silicon Carbide Junction Transistor/Schottky Diode Co-pack .

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GA20SICP12-263 Datasheet Preview — Preview of GA20SICP12-263 PDF

Datasheet Specifications

Part number: GA20SICP12-263
Manufacturer: GeneSiC
File Size: 291.63 KB
Datasheet: GA20SICP12-263-GeneSiC.pdf
Description: Silicon Carbide Junction Transistor/Schottky Diode

Features

* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Integrated SiC Schottky Rectifier
* Positive temperature coefficient for easy paralleling
* Low intrinsic device capacitance
* Low gate charge Advantages

Applications

* Down Hole Oil Drilling, Geothermal Instrumentation
* Hybrid Electric Vehicles (HEV)
* Solar Inverters
* Switched-Mode Power Supply (SMPS)
* Power Factor Correction (PFC)
* Induction Heating
* Uninterruptible Power Supply (UPS)
* Motor Drives Maximum Ratings at Tj =

GA20SICP12-263 Distributors

📁 Related Datasheet

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📌 All Tags

GA20SICP12-263 Silicon Carbide Junction Transistor Schottky Diode GeneSiC

GeneSiC GA20SICP12-263-like datasheet

GA20JT06-CAL

GA20JT12-247

GA20JT12-263