GA20JT12-247
GeneSiC
1.96MB
Normally - off silicon carbide junction transistor.
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GA20JT12-263 - Junction Transistor
(GeneSiC)
Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Ope.
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GA200 - SILICON CONTROLLED RECTIFIERS
(Digitron Semiconductors)
GA200-GA201A
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
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GA200A - SILICON CONTROLLED RECTIFIERS
(Digitron Semiconductors)
GA200-GA201A
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES Available as “HR” (hig.
GA200HS60S - Standard Speed IGBT
(International Rectifier)
.DataSheet.co.kr
Bulletin I27121 rev. B 07/02
GA200HS60S
HALF-BRIDGE IGBT INT-A-PAK
Features
• Generation 4 IGBT Technology • Standard speed: o.
GA200HS60S1 - Standard Speed IGBT
(International Rectifier)
.DataSheet.co.kr
Bulletin I27222 03/06
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• Generation 4 IGBT Technology • Standard speed: optimiz.
GA200HS60S1PBF - IGBT
(Vishay Siliconix)
.DataSheet.co.kr
GA200HS60S1PbF
Vishay High Power Products
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• Generation 4 IGBT.
GA200NS61U - Ultra-Fast Speed IGBT
(International Rectifier)
.DataSheet.co.kr
PD -94347
GA200NS61U
IGBT INT-A-PAK
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• Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencie.
GA200SA60S - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD- 50070A
/) 5)$ 5
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Features
• Standard : Optimized for minimum saturation voltage and low operating frequencies .
GA200SA60SP - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
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GA200SA60SP
INSULATED GATE BIPOLAR TRANSISTOR
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• Standard : Optimized for minimum saturation volta.