Datasheet4U.com

GA20JT12-247 - Normally - OFF Silicon Carbide Junction Transistor

GeneSiC

📥 Download Datasheet

GA20JT12-247 Datasheet Preview — Preview of GA20JT12-247 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GA20JT12-247
Manufacturer	GeneSiC
File Size	1.96 MB
Description	Normally - OFF Silicon Carbide Junction Transistor
Datasheet	GA20JT12-247-GeneSiC.pdf

GA20JT12-247 Product details

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Short-Circuit Withstand Capability.
Lowest-in-class Conduction Losses.
High Circuit E.

📁 GA20JT12-247 Similar Datasheet

GA200 - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA200A - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA200HS60S - Standard Speed IGBT (International Rectifier)
GA200HS60S1 - Standard Speed IGBT (International Rectifier)
GA200HS60S1PBF - IGBT (Vishay Siliconix)
GA200NS61U - Ultra-Fast Speed IGBT (International Rectifier)
GA200SA60S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
GA200SA60SP - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

Other Datasheets by GeneSiC

GA20JT12-263 - Junction Transistor
GA20JT06-CAL - OFF Silicon Carbide Junction Transistor
GA20SICP12-263 - Silicon Carbide Junction Transistor/Schottky Diode

Published: Nov 10, 2015 |