GA200HS60S1PBF Datasheet, Igbt, Vishay Siliconix

GA200HS60S1PBF Features

• Igbt
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed DC to 1 kHz
• Very low conduction losses
• Industry standard package
<

PDF File Details

Part number:

GA200HS60S1PBF

Manufacturer:

Vishay ↗ Siliconix

File Size:

187.68kb

Download:

📄 Datasheet

Description:

Igbt.

GA200HS60S1PBF Application

• Applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statemen

TAGS

GA200HS60S1PBF

Vishay Siliconix

📁 Related Datasheet

GA200HS60S1 - Standard Speed IGBT (International Rectifier)
.DataSheet.co.kr Bulletin I27222 03/06 GA200HS60S1 HALF-BRIDGE IGBT INT-A-PAK Features • Generation 4 IGBT Technology • Standard speed: optimiz.

GA200HS60S - Standard Speed IGBT (International Rectifier)
.DataSheet.co.kr Bulletin I27121 rev. B 07/02 GA200HS60S HALF-BRIDGE IGBT INT-A-PAK Features • Generation 4 IGBT Technology • Standard speed: o.

GA200 - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA200-GA201A High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEATURES  Available as “HR” (hig.

GA200A - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA200-GA201A High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEATURES  Available as “HR” (hig.

GA200NS61U - Ultra-Fast Speed IGBT (International Rectifier)
.DataSheet.co.kr PD -94347 GA200NS61U IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencie.

GA200SA60S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD- 50070A /) 5)$ 5 INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies .

GA200SA60SP - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.. Bulletin I27235 07/06 GA200SA60SP INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation volta.

GA200SA60U - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD -50066A GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up t.

GA200TD120U - HALF-BRIDGE IGBT DOUBLE INT-A-PAK (International Rectifier)
PD - 5.061B PRELIMINARY GA200TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.3V @VGE = 15V, IC = 200A HALF-BRIDGE IGBT DOUBLE INT-A-P.

GA200TS60U - HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT (International Rectifier)
PD -5.058B PRELIMINARY GA200TS60U Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.8V @VGE = 15V, IC = 200A HALF-BRIDGE IGBT INT-A-PAK Featur.