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GA20JT12-263 - Junction Transistor

GeneSiC

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Datasheet Details

Part number	GA20JT12-263
Manufacturer	GeneSiC
File Size	917.56 KB
Description	Junction Transistor
Datasheet	GA20JT12-263-GeneSiC.pdf

GA20JT12-263 Product details

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Short-Circuit Withstand Capability.
Lowest-in-class Conduction Losses.
High Circuit E.

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Other Datasheets by GeneSiC

GA20JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
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Published: Apr 14, 2017 |