Datasheet Details
- Part number
- GA50SICP12-227
- Manufacturer
- GeneSiC
- File Size
- 240.80 KB
- Datasheet
- GA50SICP12-227-GeneSiC.pdf
- Description
- Silicon Carbide Junction Transistor/Schottky Diode Co-pack
GA50SICP12-227 Description
Silicon Carbide Junction Transistor/Schottky Diode Co-pack .
GA50SICP12-227 Features
* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Integrated SiC Schottky Rectifier
* Positive temperature coefficient for easy paralleling
* Low intrinsic device capacitance
* Low gate charge
Package
GA50SICP12-227 Applications
* Down Hole Oil Drilling, Geothermal Instrumentation
* Hybrid Electric Vehicles (HEV)
* Solar Inverters
* Switched-Mode Power Supply (SMPS)
* Power Factor Correction (PFC)
* Induction Heating
* Uninterruptible Power Supply (UPS)
* Motor Drives
Maximum Ratings at Tj =
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