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SiC08A065ND - SILICON CARBIDE SCHOTTKY DIODE

SiC08A065ND Description

SiC08A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 8A .

SiC08A065ND Features

* Temperature Independent Switching Behavior
* Low Conduction and Switching Loss
* High Surge Current Capability
* Positive Temperature Coefficient on VF
* Fast Reverse Recovery Mechanical Data
* Case: Molded plastic, TO-263
* Marking: 08A065ND Benefits
* High Freq

SiC08A065ND Applications

* shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further

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Datasheet Details

Part number
SiC08A065ND
Manufacturer
Pan Jit International
File Size
447.65 KB
Datasheet
SiC08A065ND-PanJitInternational.pdf
Description
SILICON CARBIDE SCHOTTKY DIODE

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