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MMBT5551 NPN HIGH VOLTAGE TRANSISTOR

MMBT5551 Description

MMBT5551 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 160 Volts POWER 250 mWatts .

MMBT5551 Features

* NPN Silicon, planar design
* Collector-emitter voltage VCE = 160V
* Collector current IC = 300mA
* Lead free in comply with EU RoHS 2002/95/EC directives.
* Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA
* Case: SOT-23,

MMBT5551 Applications

* shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further

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Datasheet Details

Part number
MMBT5551
Manufacturer
Pan Jit International
File Size
265.50 KB
Datasheet
MMBT5551-PanJitInternational.pdf
Description
NPN HIGH VOLTAGE TRANSISTOR

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NPN HIGH VOLTAGE TRANSISTOR Pan Jit International
Pan Jit International MMBT5551-like datasheet