q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ra
2SB1603, Panasonic Semiconductor
Power Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features.
2SB1603A, Panasonic Semiconductor
Power Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features.
2SB1604, Panasonic Semiconductor
Power Transistors
2SB1604, 2SB1604A
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
s Features
q q q
4.6±0.2 φ3.2±0.1 9.9±0.3 .
