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2SB930A PNP Transistor

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Description

Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 For power amplificati.

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Features

* q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5max. 1.1max. 10.5min. 2.0 0.8±0

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