* q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. s 2.54±0.3 Absolute Maximum
2SB935A
Panasonic Semiconductor
58.61 KB
Pnp transistor.
Power Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
For low-voltage switching
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s F.
📁 Related Datasheet
2SB935 - PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
For low-voltage switching
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s F.
2SB935 - Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxial Planar Type 2SB935
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-.
2SB935 - Transistor
(TY Semiconductor)
Product specification
2SB935
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-emitter saturation voltage VCE(sa.
2SB935A - Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxial Planar Type 2SB935A
Features
Low collector-emitter saturation voltage VCE(sat). High-speed switching.
6.50 +0.2 5.30-0..
2SB935A - Transistor
(TY Semiconductor)
Product specification
2SB935A
TO-252
+0.15 1.50 -0.15
Features
Low collector-emitter saturation voltage VCE(sat). High-speed switching.
6.50 +0.2 5..
2SB930 - PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplificati.
2SB930 - Transistor
(TY Semiconductor)
Product specification
2SB930
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward .
2SB930A - PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplificati.
