* 3.0+0.4
* 0.2 1.5+0
* 0.4 Publication date: March 2003 SJD00020BED 1 2SB0939, 2SB0939A PC Ta 50 (1)
* 8 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) TC=25˚C IC VCE Collector-emitter saturation voltage VCE(sat) (V)
* 100 VCE(sat) I
2SB939A
Panasonic Semiconductor
103.11 KB
Power transistors.
Power Transistors
2SB0939 (2SB939), 2SB0939A (2SB939A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type Darlington
For midium-speed power switc.
📁 Related Datasheet
2SB939 - PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching Complementary to 2SD1262 and 2SD1262A.
2SB939 - Power Transistors
(Panasonic Semiconductor)
Power Transistors
2SB0939 (2SB939), 2SB0939A (2SB939A)
..net
Silicon PNP epitaxial planar type Darlington
For midium-speed power switc.
2SB939A - PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching Complementary to 2SD1262 and 2SD1262A.
2SB930 - PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplificati.
2SB930 - Transistor
(TY Semiconductor)
Product specification
2SB930
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward .
2SB930A - PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
For power amplificati.
2SB930A - Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxial Planar Type 2SB930A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.
2SB930A - Transistor
(TY Semiconductor)
Product specification
2SB930A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
High forward .
