2SD0958 Datasheet - Panasonic Semiconductor

2SD0958 Silicon NPN Transistor

www.DataSheet4U.net Transistors 2SD0958 (2SD958) Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 3.5±0.1 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC.

2SD0958 Features

* (1.0) 1 www.DataSheet4U.net 2SD0958 PC  Ta 500 24 IB = 50 µA IC  VCE Ta = 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 Collector power dissipation PC (mW) 400 20 Collector current IC (mA) 45 µA 40 µA 35 µA 10 16 300 12 30 µA 25 µA 1 200 8

2SD0958_PanasonicSemiconductor.pdf