2SD1746 - Silicon NPN epitaxial planar type Transistor
Features
q q q q
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1 0.4±0.1
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 130 80 7 10 5 15 1.3 150.
55 to +150 Unit V V
1.0±0.2
10.0.
0.
+0.3
0.75±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Co.
2SD1741- Silicon NPN triple diffusion planar type Transistor
2SD1741A- Silicon NPN triple diffusion planar type Transistor
2SD1742- Silicon NPN triple diffusion planar type Transistor
2SD1742A- Silicon NPN triple diffusion planar type Transistor
2SD1743- Silicon NPN triple diffusion planar type Transistor
2SD1743A- Silicon NPN triple diffusion planar type Transistor
2SD1744- Silicon NPN epitaxial planar type Transistor
2SD1745- Silicon NPN epitaxial planar type Transistor
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Power Transistors
2SD1746
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB1176
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q q q q
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1 0.4±0.1
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 130 80 7 10 5 15 1.3 150 –55 to +150 Unit V V
1.0±0.2
10.0 –0.
+0.3
0.75±0.1
2.3±0.2 4.6±0.
2SD1746 Datasheet
