* 1.5 1.5 R0.9 R0.9 0.4 1.0±0.1 R 0. 7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD638 2SD639 2SD638 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 0.85 0.55±0.1 3 2 emitter voltage 2SD639 Emitter to base voltage Peak collector current Collector current Collecto
2SD638
Panasonic Semiconductor
40.08 KB
Silicon npn transistor.
Transistor
2SD638, 2SD639
Silicon NPN epitaxial planer type
For medium-power general amplification Complementary to 2SB643 and 2SB644
6.9±0.1 2.5±0.1.
📁 Related Datasheet
2SD632 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD632
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min) ·Excellent.
2SD633 - NPN TRIPLE DIFFUSED TRANSISTOR
(Toshiba Semiconductor)
.
2SD633 - (2SD633 / 2SD635) SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD633 2SD635
..
DESCRIPTION ·With TO-220C package ·C.
2SD633 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD633
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Satura.
2SD633P - PNP / NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
..
..
..
.
2SD634 - NPN Transistor
(Toshiba)
:
2SD633 2SD634
I2SD635I
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPL.
2SD634 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD634
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Satura.
2SD635 - (2SD633 / 2SD635) SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD633 2SD635
..
DESCRIPTION ·With TO-220C package ·C.
