Part number:
2SD633
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
167.73 KB
Description:
Npn triple diffused transistor.
.
2SD633
Toshiba ↗ Semiconductor
167.73 KB
Npn triple diffused transistor.
.
📁 Related Datasheet
2SD632 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD632
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min) ·Excellent.
2SD633 - (2SD633 / 2SD635) SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD633 2SD635
..
DESCRIPTION ·With TO-220C package ·C.
2SD633 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD633
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Satura.
2SD633P - PNP / NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
..
..
..
.
2SD634 - NPN Transistor
(Toshiba)
:
2SD633 2SD634
I2SD635I
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPL.
2SD634 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD634
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Satura.
2SD635 - (2SD633 / 2SD635) SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD633 2SD635
..
DESCRIPTION ·With TO-220C package ·C.
2SD635 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD635
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Satura.
