2SD633 Datasheet, Transistor, Toshiba Semiconductor

PDF File Details

Part number:

2SD633

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

167.73kb

Download:

📄 Datasheet

Description:

Npn triple diffused transistor.

TAGS

2SD633

Toshiba Semiconductor

📁 Related Datasheet

2SD632 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD632 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·Excellent.

2SD633 - (2SD633 / 2SD635) SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 .. DESCRIPTION ·With TO-220C package ·C.

2SD633 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD633 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Satura.

2SD633P - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
.. .. .. .

2SD634 - NPN Transistor (Toshiba)
: 2SD633 2SD634 I2SD635I SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPL.

2SD634 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD634 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Satura.

2SD635 - (2SD633 / 2SD635) SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 .. DESCRIPTION ·With TO-220C package ·C.

2SD635 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD635 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Satura.

2SD636 - (2SD636 / 2SD637) NPN Transistor (Panasonic)
Free Datasheet http://../ .

2SD637 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 .