2SK2593 Datasheet - Panasonic Semiconductor

2SK2593 Silicon N-Channel MOSFET

Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low noies, high gain q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source.

2SK2593 Features

* 1 Silicon Junction FETs (Small Signal) PD  Ta 150 5 Ta=25˚C 125 2SK2593 ID  VDS 10 Ta=25˚C ID  VDS Allowable power dissipation PD (mW) 4 8 Drain current ID (mA) 100 Drain current ID (mA) VGS=0V 3 VGS=0

* 0.2V 6

* 0.2V 75

* 0.4V 4

* 0.6V 2

2SK2593_PanasonicSemiconductor.pdf

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Datasheet Details

Part number:

2SK2593

Manufacturer:

Panasonic Semiconductor

File Size:

33.17 KB

Description:

Silicon n-channel mosfet.

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2SK2593 2SK2593 Silicon N-Channel MOSFET Panasonic Semiconductor

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