* 1 Silicon Junction FETs (Small Signal) PD Ta 150 5 Ta=25˚C 125 2SK2593 ID VDS 10 Ta=25˚C ID VDS Allowable power dissipation PD (mW) 4 8 Drain current ID (mA) 100 Drain current ID (mA) VGS=0V 3 VGS=0
* 0.2V 6
* 0.2V 75
* 0.4V 4
* 0.6V 2
2SK2593
Panasonic Semiconductor
33.17 KB
Silicon n-channel mosfet.
Silicon Junction FETs (Small Signal)
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification For switching
0.4
unit: mm
1.6±0.15 0.8±.
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