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C5591 2SC5591

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Description

Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm * .

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Features

* 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5
* High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle
* High-speed switching: Fall time tf < 0.2 µs
* Low collector-emitter saturation voltage: Collec

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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