C5583 - 2SC5583

Features

High breakdown voltage, and high reliability through the use of a glass passivation layer.
High-speed switching.
Wide area of safe operation (ASO) 26.0±0.5 (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation.

Panasonic Semiconductor

Datasheet Details

Part number	C5583
Manufacturer	Panasonic
File Size	73.38 KB
Description	2SC5583
Datasheet	C5583 Datasheet
Additional preview pages of the C5583 datasheet.

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Full PDF Text Transcription

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Power Transistors www.DataSheet4U.com 2SC5583 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output (10.0) (6.0) (2.0) (4.0) 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) I Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 26.0±0.5 (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.

Published: Apr 26, 2006 |