Datasheet4U Logo Datasheet4U.com

D2530 - 2SD2530

Features

  • High forward current transfer ratio hFE.
  • Allowing supply with the radial taping.
  • Low collector to emitter saturation voltage VCE(sat): < 2.5 V 2.5±0.1 1.2±0.1 1.48±0.2 90° C 1.0 2.25±0.2 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C.

📥 Download Datasheet

Datasheet preview – D2530

Datasheet Details

Part number D2530
Manufacturer Panasonic
File Size 61.29 KB
Description 2SD2530
Datasheet download datasheet D2530 Datasheet
Additional preview pages of the D2530 datasheet.

📁 Similar Datasheet

  • D2536 - 2SD2536 (Toshiba)
  • D2539 - 2SD2539 (Toshiba Semiconductor)
  • D25-02C - ESAD25-02C (Fuji Electric)
  • D2500 - 1.5 m m D2500-Type Digital Isolated DFB Laser Module (Agere Systems)
  • D2500D - Standard Recovery Diode (nELL)
  • D2502G - 1.5 m m D2500-Type Digital Isolated DFB Laser Module (Agere Systems)
  • D2511D - 1.5 m m D2500-Type Digital Isolated DFB Laser Module (Agere Systems)
  • D2511G - 1.5 m m D2500-Type Digital Isolated DFB Laser Module (Agere Systems)
  • D2516EC4BXGGB - 4G-bits DDR3L SDRAM (Kingston)
  • D2517D - 1.5 m m D2500-Type Digital Isolated DFB Laser Module (Agere Systems)
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

Click to expand full text
Power Transistors 2SD2530 Silicon NPN triple diffusion planer type Darlington Unit: mm 4.2±0.2 For power amplification 13.0±0.2 10.0±0.2 1.0±0.2 5.0±0.1 I Features • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 2.5 V 2.5±0.1 1.2±0.1 1.48±0.2 90° C 1.0 2.25±0.2 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 100 100 5 10 5 15 2 150 −55 to +150 °C °C Unit V V V A A W 2.5±0.2 2.5±0.
Published: |