* 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package
* Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open)
D2573
Panasonic Semiconductor
109.74 KB
2sd2573.
Power Transistors
2SD2573
www.DataSheet4U.com Silicon NPN triple diffusion planar type
For high current amplification, power amplification
7.5±0.2
.
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