Datasheet Specifications
- Part number
- LN58
- Manufacturer
- Panasonic Semiconductor
- File Size
- 44.25 KB
- Datasheet
- LN58_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .
Features
* High-power output, high-efficiency : PO = 3.5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 3.9±0.3 Not soldered ø2.4 4.5±0.3 1.2 2.9±0.25 0.9 1.7±0.2 0.8 12.8 minLN58 Distributors
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