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LN58 Datasheet - Panasonic Semiconductor

LN58 GaAs Infrared Light Emitting Diode

LN58 Features

* High-power output, high-efficiency : PO = 3.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small size, thin side-view type package 3.9±0.3 Not soldered ø2.4 4.5±0.3 1.2 2.9±0.25 0.9 1.7±0.2 0.8 12.8 min

LN58 Datasheet (44.25 KB)

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Datasheet Details

Part number:

LN58

Manufacturer:

Panasonic Semiconductor

File Size:

44.25 KB

Description:

Gaas infrared light emitting diode.

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LN58 GaAs Infrared Light Emitting Diode Panasonic Semiconductor

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