MIP2E4DMY Datasheet - Panasonic Semiconductor

MIP2E4DMY Silicon MOS IPD

www.DataSheet4U.com (IPD) MIP2E4DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.1 0.2 0.8±0.1 VD VC ID IDP IC Tch Tstg 700 10 1.72 2.4 0.1 150 55 ∼ +150 V V A A A °C °C 2.54±0.3 5.08±0.5 1 2 3 1 : Control 2 : Source 3 : Drain TO-220-A1 Package : MIP2E4DMY I Control 1 3 Drain S R Q Q MOSFET Max Duty Clock.

MIP2E4DMY_PanasonicSemiconductor.pdf