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MSG33001 Transistor

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Description

Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.33+0.05 *0.02 0.10+0.05 *0.02 Unit: mm * .

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Features

* Compatible between high breakdown voltage and high cutoff frequency
* Low-noise, high-gain amplification
* Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm) 3 0.15 min. 0.80±0.05 1.20±0.05 0.52±0.

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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