MSG36E41 - Transistor

Features

s.
Compatible between high breakdown voltage and high cut-off frequency.
Low noise, high-gain amplification.
Two elements incorporated into one package (Each transistor is separated).
Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02.
MSG33004 + MSG33001 (0.35) (0.35) 1.00±0.05.
Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Coll.

Panasonic Semiconductor

Datasheet Details

Part number	MSG36E41
Manufacturer	Panasonic Semiconductor
File Size	165.91 KB
Description	Transistor
Datasheet	MSG36E41 Datasheet
Additional preview pages of the MSG36E41 datasheet.

📁 Similar Datasheet

MSG061P03G - P-Channel Enhancement Mode MOSFET (CITC)
MSG100G41 - MSG100x41 (ETC)
MSG100J41 - MSG100x41 (ETC)
MSG100L41 - MSG100x41 (ETC)
MSG100N41 - MSG100x41 (ETC)
MSG100Q41 - MSG100x41 (ETC)
MSG100S41 - MSG100x41 (ETC)
MSG100U41 - MSG100x41 (ETC)
MSG104 - (MSG104 - MSG106) 1 Amp Schottky Rectifier (Microsemi Corporation)
MSG105 - (MSG104 - MSG106) 1 Amp Schottky Rectifier (Microsemi Corporation)

Other Datasheets by Panasonic Semiconductor

MSG36E41 - SiGe HBT type
MSG33001 - Transistor
MSG43001 - Transistor
MSG43004 - Transistor

Full PDF Text Transcription

Click to expand full text

Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02 • MSG33004 + MSG33001 (0.35) (0.35) 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Tr2 www.DataSheet4U.com Display at No.

Published: Dec 28, 2005 |