MSG33001 Overview
Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.33+0.05 0.02 0.10+0.05 0.02 Unit:.
MSG33001 Key Features
- patible between high breakdown voltage and high cutoff frequency
- Low-noise, high-gain amplification
- Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.
- Junction temperature Storage temperature
- Electrical Characteristics Ta = 25°C ± 3°C