Datasheet Summary
Transistors
SiGe HBT type
For low-noise RF amplifier
0.33+0.05
- 0.02 0.10+0.05
- 0.02
Unit: mm
- Features
- patible between high breakdown voltage and high cutoff frequency
- Low-noise, high-gain amplification
- Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm)
3 0.15 min. 0.80±0.05 1.20±0.05 0.52±0.03 0 to 0.01 5˚ (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. 0.23+0.05
- 0.02 1 2
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation
- Junction temperature Storage temperature
Symbol...