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MSG33001 - Transistor

Key Features

  • s.
  • Compatible between high breakdown voltage and high cutoff frequency.
  • Low-noise, high-gain amplification.
  • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm) 3 0.15 min. 0.80±0.05 1.20±0.05 0.52±0.03 0 to 0.01 5˚ (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. 0.23+0.05.
  • 0.02 1 2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 Unit: mm ■ Features • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm) 3 0.15 min. 0.80±0.05 1.20±0.05 0.52±0.03 0 to 0.01 5˚ (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. 0.23+0.05 –0.