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MSG43004 - Transistor

Key Features

  • Compatible between high breakdown voltage and high cut-off frequency.
  • Low noise, high-gain amplification.
  • Optimal size reduction and high level integration for ultra-small packages 3 2 1 1.00±0.05 0.39+0.01.
  • 0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector curren.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 0.60±0.05 Unit: mm ■ Features • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 3 2 1 1.00±0.05 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 100 100 125 −55 to +125 Unit V V V mA mW °C °C 3 0.65±0.01 2 0.05±0.