Datasheet Summary
Transistors
SiGe HBT type
For low-noise RF amplifier
0.60±0.05
Unit: mm
- Features
- patible between high breakdown voltage and high cut-off frequency
- Low noise, high-gain amplification
- Optimal size reduction and high level integration for ultra-small packages
1 1.00±0.05
0.39+0.01
- 0.03
0.15±0.05 0.05±0.03 0.35±0.01
0.25±0.05
0.50±0.05
0.25±0.05 1
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